Light emitting diode and data transmission and reception apparatus
US9905725B2 · kind B2 · utility
65Cited by
5References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 25, 2015 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Jun 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8312
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A light emitting diode, including a semiconductor epitaxial structure, a first electrode and a second electrode is provided. The semiconductor epitaxial structure includes a plurality stacked light-emitting layers, and each of the light-emitting layers respectively emits different range of wavelength of light. The first electrode is electrically connected to the semiconductor epitaxial structure. The second electrode is electrically connected to the semiconductor epitaxial structure. Furthermore, a data transmission and reception apparatus is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.