Magneto-resistance element and magnetic sensor using the same
US9905752B2 · kind B2 · utility
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Key dates
| Filing date | Aug 8, 2014 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Sep 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magneto-resistance element includes a resistance variable layer and a trap layer. The resistance variable layer includes the alloy having B. A resistance of the resistance variable layer changes according to a magnetic field. The trap layer is for trapping the B diffused from the resistance variable layer. With this structure, the B in the resistance variable layer becomes easily trapped in the trap layer and becomes difficult to be diffused to an outside of the magneto-resistance element. A difficulty associated with B diffusion to the outside of the magneto-resistance element can be prevented from occurring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.