Nonlinear memristor devices with three-layer selectors

US9905757B2 · kind B2 · utility

Assignee

• Hewlett Packard Enterprise Development LP · US

Inventors

• Byungjoon Choi · Mountain View, US
• Jianhua Yang · Palo Alto, US
• R. Stanley Williams · Portola Valley, US
• Gary Gibson · Tucson, US
• Warren Jackson · Wilmington, US

Key dates

• Filing date: Nov 12, 2013
• Grant date: Feb 27, 2018
• Expiry date: Nov 22, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A nonlinear memristor device with a three-layer selector includes a memristor in electrical series with a three-layer selector. The memristor comprises at least one electrically conducting layer and at least one electrically insulating layer. The three-layer selector comprises a three-layer structure selected from the group consisting of XN—XO—XN; XN—YO—ZN; XN—YO—XN; XO—XN—XO; XO—YN—XO; XO—YN—ZO; XO—YO—XO; XO—YO—ZO; XN—YN—ZN; and XN—YN—XN, X represents a compound-forming metal different from Y and Z.