Semiconductor module
US9906165B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2016 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Jun 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Reliability of a semiconductor device is improved. A third semiconductor chip on which a control circuit is formed, and a first semiconductor chip of a plurality of IGBT chips are electrically connected via a high-side relay board. That is, the first semiconductor chip and the third semiconductor chip are electrically connected via a first wire, a high-side relay board and a second wire. Similarly, the third semiconductor chip on which the control circuit is formed and a second semiconductor chip of a plurality of IGBT chips are electrically connected via a low-side relay board. That is, the second semiconductor chip and the third semiconductor chip are electrically connected via the first wire, the low-side relay board and the second wire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.