Magnetoresistive effect device
US9906199B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2016 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Sep 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2001/0085
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive effect device includes a magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer; a first port; a second port; a signal line; an impedance element; and a direct-current input terminal. The first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line. The impedance element is connected to ground and to the signal line between the magnetoresistive effect element and the first port or the second port. The direct-current input terminal is connected to the signal line at the opposite side to the impedance element with the magnetoresistive effect element in between the direct-current input terminal and the impedance element. A closed circuit including the magnetoresistive effect element, the signal line, the impedance element, the ground, and the direct-current input terminal is to be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.