Lateral/vertical transistor structures and process of making and using same
US9908115B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2015 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Feb 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/641
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A microfluidic device can include a base an outer surface of which forms one or more enclosures for containing a fluidic medium. The base can include an array of individually controllable transistor structures each of which can comprise both a lateral transistor and a vertical transistor. The transistor structures can be light activated, and the lateral and vertical transistors can thus be photo transistors. Each transistor structure can be activated to create a temporary electrical connection from a region of the outer surface of the base (and thus fluidic medium in the enclosure) to a common electrical conductor. The temporary electrical connection can induce a localized electrokinetic force generally at the region, which can be sufficiently strong to move a nearby micro-object in the enclosure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.