Method for producing a semiconductor using a vacuum furnace
US9908282B2 · kind B2 · utility
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16References
13Claims
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Key dates
| Filing date | Apr 15, 2014 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Jun 17, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a semiconductor includes providing a mold defining a planar capillary space; placing a measure of precursor in fluid communication with the capillary space; creating a vacuum around the mold and within the planar capillary space; melting the precursor; allowing the melted precursor to flow into the capillary space; and cooling the melted precursor within the mold such that the precursor forms a semiconductor, the operations of melting the precursor, allowing the precursor to flow into the capillary space, and cooling the melted precursor occurring in the vacuum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.