Method for achieving good adhesion between dielectric and organic material
US9908774B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 15, 2014 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Sep 15, 2034 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/053
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.