Patent · US Active

MEMS switch device and method of fabrication

US9911563B2 · kind B2 · utility

3Cited by
12References
28Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 31, 2013
Grant dateMar 6, 2018
Priority date
Expiry dateMay 5, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/181
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A MEMS switch device including: a substrate layer; an insulating layer formed over the substrate layer; and a MEMS switch module having a plurality of contacts formed on the surface of the insulating layer, wherein the insulating layer includes a number of conductive pathways formed within the insulating layer, the conductive pathways being configured to interconnect selected contacts of the MEMS switch module.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.