Scanning probe lithography methods utilizing an enclosed sinusoidal pattern
US9911574B2 · kind B2 · utility
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4References
19Claims
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Key dates
| Filing date | Aug 12, 2016 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Aug 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3175
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided among other things are a scanning electron microscope, scanning transmission electron microscope, focused ion beam microscope, ion beam micromachining device, or scanning probe nanofabrication device, wherein the microscope or device is configured to move a substrate and a scanning modality relative to one another with an enclosed sinusoidal trajectory, and methods of operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.