Plasma processing apparatus and plasma processing method
US9911638B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2016 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Feb 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68327
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes: a reaction chamber; a plasma generation unit; a stage disposed inside the reaction chamber; an electrostatic chuck mechanism including an electrode portion disposed inside the stage; a support portion which supports the conveyance carrier; and an elevation mechanism which elevates and lowers the support portion relative to the stage. In a case in which the conveyance carrier is mounted on the stage, the electrostatic chuck mechanism performs an operation of applying a voltage to the electrode portion after contact of an outer circumferential portion of a holding sheet of the conveyance carrier to the stage, the operation including a voltage varying operation of increasing and decreasing an absolute value of the voltage, and the plasma generation unit generates plasma after completion of the voltage varying operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.