Semiconductor device with an interconnect structure and method for forming the same
US9911650B2 · kind B2 · utility
3Cited by
19References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2016 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Oct 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device structure includes providing a substrate and forming a gate electrode on the substrate. A first contact structure is formed in and on the gate electrode. The first contact structure comprises a first portion and a second portion. The first portion is formed in the gate electrode, and the second portion is formed on the first portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.