Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9911743B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2007 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Jul 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Under one aspect, a method of making a nanotube switch includes: providing a substrate having a first conductive terminal; depositing a multilayer nanotube fabric over the first conductive terminal; and depositing a second conductive terminal over the multilayer nanotube fabric, the nanotube fabric having a thickness, density, and composition selected to prevent direct physical and electrical contact between the first and second conductive terminals. In some embodiments, the first and second conductive terminals and the multilayer nanotube fabric are lithographically patterned so as to each have substantially the same lateral dimensions, e.g., to each have a substantially circular or rectangular lateral shape. In some embodiments, the multilayer nanotube fabric has a thickness from 10 nm to 200 nm, e.g., 10 nm to 50 nm. The structure may include an addressable diode provided under the first conductive terminal or deposited over the second terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.