Virtual high dynamic range large-small pixel image sensor
US9911773B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2015 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Aug 12, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes photodiodes arranged in semiconductor material. Each of the photodiodes is identically sized and is fabricated in the semiconductor material with identical semiconductor processing conditions. The photodiodes are organized into virtual large-small groupings including a first photodiode and a second photodiode. Microlenses are disposed over the semiconductor material with each of microlenses disposed over a respective photodiode. A first microlens is disposed over the first photodiode, and a second microlens is disposed over the second photodiode. A mask is disposed between the first microlens and the first photodiode. The mask includes an opening through which a first portion of incident light directed through the first microlens is directed to the first photodiode. A second portion of the incident light directed through the first microlens is blocked by the mask from reaching the first photodiode. There is no mask between the second microlens and the second photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.