Field-plate structures for semiconductor devices
US9911817B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2016 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Aug 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
Field-plate structures are disclosed for electrical field management in semiconductor devices. A field-plate semiconductor structure includes a semiconductor substrate, a source ohmic contact, a drain ohmic contact, and a gate contact disposed over a gate region between the source ohmic contact and the drain ohmic contact, and a source field plate connected to the source ohmic contact. A field-plate dielectric is disposed over the semiconductor substrate. An encapsulating dielectric is disposed over the gate contact, wherein the encapsulating dielectric covers a top surface of the gate contact. The source field plate is disposed over the field-plate dielectric in a field plate region, from which the encapsulating dielectric is absent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.