Source/drain conductors for transistor devices

US9911854B2 · kind B2 · utility

Assignee

• Flexenable Limited · GB

Inventors

• Jon Jongman · Cambridge, GB
• Brian Asplin · Cambridge, GB

Key dates

• Filing date: Dec 9, 2014
• Grant date: Mar 6, 2018
• Expiry date: Dec 9, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/84

Abstract

A transistor device comprising: source and drain conductors connected by a semiconductor channel provided by a layer of semiconductor material formed over the source and drain conductors; and a gate conductor capacitively coupled to the semiconductor channel via a gate dielectric; wherein at least one of the source and drain conductors comprises a multilayer structure in at least one region thereof, the multilayer structure comprising a lower layer and an upper layer, the material of the lower layer being better than the material of the upper layer at injecting charge into the semiconductor material; and the material of the upper layer exhibiting better electrical conductivity than the material of the lower layer.