Capacitive silicon microphone and fabrication method thereof
US9913040B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2014 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Sep 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R2410/03
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A capacitive silicon microphone comprises: a first dielectric layer sets on a substrate with a back cavity, a lower polar plate which is located over the back cavity, a first elastic member of which an inner edge is connected with the edge of the lower polar plate and an outer edge is located on the upper surface of the first dielectric layer, a second dielectric layer which is located on the outer edge of the first elastic member and right above the first dielectric layer, an upper polar plate which has a plurality of release holes and is formed above the lower polar plate with an air gap in between, a second elastic member of which an inner edge is connected with the edge of the upper polar plate and an outer edge is located on the upper surface of the second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.