Indium phosphide smoothing and chemical mechanical planarization processes

US9916985B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• JSR CORPORATION · JP

Inventors

• Henry A. Beveridge · Beacon, US
• Tatsuyoshi Kawamoto · Somalomo, CM
• Mahadevaiyer Krishnan · Hopewell Junction, US
• Yohei Oishi · White Plains, US
• Dinesh Kumar Penigalapati · Guilderland, US
• Rachel S. Steiner · Kiryat Yam, IL
• James A. Tornello · Somers, US
• Tatsuya Yamanaka · Somalomo, CM

Key dates

• Filing date: May 20, 2016
• Grant date: Mar 13, 2018
• Expiry date: May 20, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/30612
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.