Silicon single crystal wafer, manufacturing method thereof and method of detecting defects
US9917022B2 · kind B2 · utility
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3References
10Claims
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Key dates
| Filing date | Jun 30, 2016 |
| Grant date | Mar 13, 2018 |
| Priority date | — |
| Expiry date | Jun 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/53
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon single crystal wafer is provided. The silicon single crystal wafer includes an IDP which is divided into an NiG region and an NIDP region, wherein the IDP region is a region where a Cu based defect is not detected, the NiG region is a region where an Ni based defect is detected and the NIPD region is a region where an Ni based defect is not detected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.