Semiconductor device and method of manufacturing the same
US9917091B2 · kind B2 · utility
4Cited by
1References
11Claims
0Family size
Assignee
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Key dates
| Filing date | May 28, 2015 |
| Grant date | Mar 13, 2018 |
| Priority date | — |
| Expiry date | May 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/809
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, includes: forming an insulating film on a first surface of a semiconductor substrate; and forming a hydrogen supply film on a second surface facing the first surface of the semiconductor substrate, the hydrogen supply film containing one or more of silicon oxide, TEOS, BPSG, BSG, PSG, FSG, carbon-containing silicon oxide, silicon nitride, carbon-containing silicon nitride, and oxygen-containing silicon carbide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.