Patent · US Active

Integrated capacitor and method for producing the same

US9917146B2 · kind B2 · utility

3Cited by

2References

15Claims

0Family size

Assignee

Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

Anton Bauer
Tobias Erlbacher · Erlangen, DE
Holger Schwarzmann · Edenkoben, DE

Key dates

Filing date	Aug 29, 2016
Grant date	Mar 13, 2018
Priority date	—
Expiry date	Aug 29, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D88/101
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated capacitor includes a substrate with a first main surface area and an opposing second main surface area. A capacitor structure with a dielectric layer is integrated in the first main surface area. A compensation structure with a compensation layer is integrated in the second main surface area. The ratio between a surface enlargement of the second main surface area effected by the compensation structure corresponds to at least 30% of the surface enlargement of the first main surface area effected by the capacitor structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.