Oxide semiconductor thin film, thin film transistor, manufacturing method and device
US9917205B2 · kind B2 · utility
0Cited by
0References
18Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 2, 2015 |
| Grant date | Mar 13, 2018 |
| Priority date | — |
| Expiry date | Sep 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This disclosure discloses an oxide semiconductor thin film, a thin film transistor, a manufacturing method and a device, belonging to the field of flat panel display. The oxide semiconductor thin film is made of an oxide containing zirconium and indium. A method of manufacturing the oxide semiconductor thin film comprises preparing a target using the oxide containing zirconium and indium, and sputtering the target to obtain the oxide semiconductor thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.