Electrical contact structure for a semiconductor component, and semiconductor component

US9917229B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Korbinian Perzlmaier · Regensburg, DE
• Bjoern Muermann · Regensburg, DE
• Karl Engl · Niedergebraching, DE
• Christian Eichinger · Wenzenbach, DE

Key dates

• Filing date: May 22, 2015
• Grant date: Mar 13, 2018
• Expiry date: May 22, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

An electrical contact structure (10) for a semiconductor component (100) is specified, comprising a transparent electrically conductive contact layer (1), on which a first metallic contact layer (2) is applied, a second metallic contact layer (3), which completely covers the first metallic contact layer (2), and a separating layer (4), which is arranged between the transparent electrically conductive contact layer (1) and the second metallic contact layer (3) and which separates the second metallic contact layer (3) from the transparent electrically conductive contact layer (1).Furthermore, a semiconductor component (100) comprising a contact structure (10) is specified.