Thermoelectric element, method of manufacturing the same and semiconductor device including the same
US9917240B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2015 |
| Grant date | Mar 13, 2018 |
| Priority date | — |
| Expiry date | Sep 17, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/93
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thermoelectric element is provided as follows. First and second semiconductor fin structures are disposed on a semiconductor substrate. Each semiconductor fin structure extends in a first direction, protruding from the semiconductor substrate. First and second semiconductor nanowires are disposed on the first and second semiconductor fin structures, respectively. The first semiconductor nanowires include first impurities. The second semiconductor nanowires include second impurities different from the first impurities. A first electrode is connected to first ends of the first and second semiconductor nanowires. A second electrode is connected to second ends of the first semiconductor nanowires. A third electrode is connected to second ends of the second semiconductor nanowires.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.