Integrated voltage regulators with magnetically enhanced inductors

US9921640B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Uwe Zillmann · Braunschweig, DE
• Andre Schaefer · Hersbruck, DE
• Ruchir Saraswat · Swindon, GB
• Telesphor Kamgaing · Chandler, US
• Paul B. Fischer · Portland, US
• Guido Droege · Braunschweig, DE

Key dates

• Filing date: Sep 28, 2012
• Grant date: Mar 20, 2018
• Expiry date: May 4, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/4913
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Magnetically enhanced inductors integrated with microelectronic devices at chip-level. In embodiments, magnetically enhanced inductors include a through substrate vias (TSVs) with fill metal to carry an electrical current proximate to a magnetic layer disposed on a substrate through which the TSV passes. In certain magnetically enhanced inductor embodiments, a TSV fill metal is disposed within a magnetic material lining the TSV. In certain magnetically enhanced inductor embodiments, a magnetically enhanced inductor includes a plurality of interconnected TSVs disposed proximate to a magnetic material layer on a side of a substrate. In embodiments, voltage regulation circuitry disposed on a first side of a substrate is integrated with one or more magnetically enhanced inductors utilizing a TSV passing through the substrate. In further embodiments, integrated circuitry on a same substrate as the magnetically enhanced inductor, or on another substrate stacked thereon, completes the VR and/or is powered by the VR circuitry.