Magnetoresistance element with improved response to magnetic fields
US9922673B2 · kind B2 · utility
16Cited by
56References
27Claims
0Family size
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Key dates
| Filing date | Oct 31, 2014 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Oct 31, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.