Deposition system for growth of inclined c-axis piezoelectric material structures
US9922809B2 · kind B2 · utility
13Cited by
8References
23Claims
0Family size
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Key dates
| Filing date | Oct 13, 2016 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Oct 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/09
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.