Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device
US9922822B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 8, 2016 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Jan 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/66
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On a silicon carbide semiconductor substrate, heat treatment is performed after one layer or two or more layers of an oxide film, a nitride film, or an oxynitride film are formed as a gate insulating film. The heat treatment after the gate insulating film is formed is performed for a given period in an atmosphere that includes H2 and H2O without including O2. As a result, hydrogen or hydroxyl groups can be segregated in a limited region that includes the interface of the silicon carbide substrate and the gate insulating film. The width of the region to which the hydrogen or hydroxyl groups is segregated is from 0.5 nm to 10 nm. In such a manner, the interface state density can be lowered and high channel mobility can be realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.