CVD reactor and method for nanometric delta doping of diamond
US9922823B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 7, 2016 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Oct 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for creating nanometric delta doped layers in epitaxial diamond includes providing a dummy gas load with gas impedance equivalent to the reactor, and switching gas supplied between the reactor and the gas dummy load without stopping either flow, thereby enabling rapid flow and rapid gas switching without turbulence. An atomically smooth, undamaged substrate can be prepared, preferably in the (100) plane, by etching the surface after polishing to remove subsurface damage. A gas phase chemical getter reactant such as hydrogen disulfide can be used to suppress incorporation of residual boron into the intrinsic layers. Embodiments can produce interfaces between doped and mobile layers that provide at least 100 cm2/Vsec carrier mobility and 1013 cm−2 sheet carrier concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.