Image sensor with hybrid deep trench isolation
US9923009B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2016 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Nov 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a plurality of photodiodes disposed in a semiconductor material between a first side and a second side of the semiconductor material. The image sensor also includes a plurality of hybrid deep trench isolation (DTI) structures disposed in the semiconductor material, where individual photodiodes in the plurality of photodiodes are separated by individual hybrid DTI structures. The individual hybrid DTI structures include a shallow portion that extends from the first side towards the second side of the semiconductor material, and the shallow portion includes a dielectric region and a metal region such that at least part of the dielectric region is disposed between the semiconductor material and the metal region. The hybrid DTI structures also include a deep portion that extends from the shallow portion and is disposed between the shallow portion and the second side of the semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.