Fabricating method of fin-type semiconductor device

US9923065B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Beijing) Corporation · CN
• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Xinyun Xie · Shanghai, CN
• Ming Zhou · Shanghai, CN

Key dates

• Filing date: Jul 18, 2016
• Grant date: Mar 20, 2018
• Expiry date: Jul 18, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/3677
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In accordance with various embodiments of the disclosed subject matter, a semiconductor device, and a fabricating method thereof are provided. In some embodiments, the semiconductor device comprises: a semiconductor substrate, wherein a plurality of fins are projected on a surface of the semiconductor substrate; and an insulating layer on side walls of the plurality of fins, wherein the insulating layer is located on the surface of the semiconductor substrate, a surface of the insulating layer is lower than top surfaces of the plurality of fins, and a thermal conductivity of the insulating layer is larger than a thermal conductivity of silicon oxide.