Low temperature poly-silicon thin film transistor and manufacturing method thereof
US9923075B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Oct 15, 2015 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Oct 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low temperature poly-silicon thin film transistor and a manufacturing method thereof are disclosed. The method includes forming an active layer on a base substrate, forming an ohmic contact layer on the active layer through an atomic layer deposition process, and forming a source electrode and a drain electrode on the ohmic contact layer. The ohmic contact layer includes a plurality of conductive ionic layers and a plurality of monocrystalline silicon layers/poly-silicon layers. The source electrode and the drain electrode are in contact with the active layer through the ohmic contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.