Particle detector and method of making the same
US9923115B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2016 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Oct 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/306
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A particle detector includes a support member. A front electrode layer is disposed over the support member. A semiconductor heterojunction is disposed over the front electrode layer. The semiconductor heterojunction has at least a polycrystalline n-type layer and at least a polycrystalline p-type layer. A back electrode layer is disposed over the semiconductor heterojunction. The back electrode includes at least one removed portion that separates a first portion of the back electrode layer from a second portion of the back electrode layer. The particle detector also includes a first body of electrically insulating material which separates a first portion of the semiconductor heterojunction from a second portion of the semiconductor heterojunction. The first body of electrically insulating material also separates a first portion of the front electrode layer from a second portion of the front electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.