Patent · US Active

Method for producing solar cells having simultaneously etched-back doped regions

US9923116B2 · kind B2 · utility

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13Claims
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Key dates

Filing dateMar 11, 2015
Grant dateMar 20, 2018
Priority date
Expiry dateMar 11, 2035

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

A method for producing a solar cell is described, in which a plurality of doped regions are to be etched-back selectively or over their entire surface. Once a semiconductor substrate (1) has been provided, various doped regions (3, 5) are formed in partial regions of a surface of the semiconductor substrate, the various doped regions (3, 5) differing as regards their doping concentration and/or their doping polarity. The various doped regions (3, 5) are then purposively etched-back in order to achieve desired doping profiles, and finally electrical contacts (21) are formed at least at some of the doped regions (3, 5). The etching-back of the various doped regions takes place in a common etching operation in an etching medium. In order that such common etching-back of various doped regions (3, 5) is possible, it is proposed purposively to adjust both properties of the initially unetched doped regions (3, 5) and parameters that influence the etching operation with regard to properties of the desired doping profiles within the etched doped regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.