Semiconductor structure with inhomogeneous regions

US9923117B2 · kind B2 · utility

Assignee

• Sensor Electronic Technology, Inc.

Inventors

• Maxim S. Shatalov · Columbia, US
• Alexander Dobrinsky · Loudonville, US
• Alexander Lunev · Columbia, US
• Rakesh Jain · Columbia, US
• Jinwei Yang · Columbia, US
• Michael Shur · Latham, US
• Remigijus Gaska · Columbia, US

Key dates

• Filing date: Dec 30, 2015
• Grant date: Mar 20, 2018
• Expiry date: Dec 30, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/841

Abstract

A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.