Thin film transistor, method of manufacturing same, and electronic device including thin same
US9923159B2 · kind B2 · utility
0Cited by
4References
17Claims
0Family size
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Key dates
| Filing date | Apr 18, 2016 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Apr 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/6576
Abstract
A thin film transistor includes a gate electrode, a semiconductor overlapping the gate electrode, a gate insulator between the gate electrode and the semiconductor, and a source electrode and a drain electrode electrically connected to the semiconductor, wherein the gate insulator includes an inorganic insulation layer facing the gate electrode and an organic insulation layer facing the semiconductor. A method of manufacturing the thin film transistor and an electronic device including the thin film transistor are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.