Silicon-based image sensor with improved reading dynamic range
US9924118B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Oct 30, 2014 |
| Grant date | Mar 20, 2018 |
| Priority date | — |
| Expiry date | Oct 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/78
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In an image sensor, the effective capacitance of the storage node NS of the pixel, which stores the charges (the electrons) collected by the photosensitive element of the pixel, is modified with the aid of a feedback loop 100 which influences the supply VREFP of the follower transistor T3 connected to the storage node, in such a way that the apparent capacitance of the storage node depends on the gain GL of the loop. By modifying the gain, the capacitance of the storage node and therefore the charge/voltage conversion factor, which is inversely proportional to this capacitance, is modified.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.