Patent · US Active

MEMS devices and methods of forming the same

US9926190B2 · kind B2 · utility

2Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 21, 2016
Grant dateMar 27, 2018
Priority date
Expiry dateJan 21, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/81805
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A MEMS device and methods of forming are provided. A dielectric layer of a first substrate is patterned to expose conductive features and a bottom layer through the dielectric layer. A first surface of a second substrate is bonded to the dielectric layer and the second substrate is patterned to form a membrane and a movable element. A cap wafer is bonded to the second substrate, where bonding the cap wafer to the second substrate forms a first sealed cavity comprising the movable element and a second sealed cavity that is partially bounded by the membrane. Portions of the cap wafer are removed to expose the second sealed cavity to ambient pressure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.