Terahertz modulator based on low-dimension electron plasma wave and manufacturing method thereof
US9927675B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2015 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Jun 9, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/15
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A terahertz modulator based on low-dimension electron plasma wave, a manufacturing method thereof, and a high speed modulation method are provided. The terahertz modulator includes a plasmon and a cavity. The present disclosure discloses the resonance absorption mechanism caused by collective oscillation of electrons (plasma wave, namely, the plasmon). In order to enhance the coupling strength between the terahertz wave and the plasmon, a GaN/AlGaN high electron mobility transistor structure having a grating gate is integrated in a terahertz Fabry-Pérot cavity, and a plasmon polariton is formed arising from strong coupling of the plasmon and a cavity mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.