Methods of fabricating a semiconductor device
US9929013B2 · kind B2 · utility
4Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2017 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Jan 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating a semiconductor device are provided. The methods may include etching a bulk pattern on a peripheral region to form patterns and then forming a layer on both a cell region and a peripheral region. The methods may include forming line patterns that extend from the cell region onto the peripheral region and then forming a layer on both the cell region and a peripheral region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.