Method of manufacturing semiconductor device
US9929023B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2016 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Nov 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device may include forming first trenches that define active patterns extending in a first direction on a substrate, forming first insulating layers filling the first trenches, forming first mask patterns extending in the first direction while having a first width along a second direction perpendicular to the first direction, forming a second mask pattern extending in the first direction while having a second width along the second direction, and forming a second trench that partly defines an active region by executing a first etching process that etches the active patterns and the first insulating layer using the first mask patterns and the second mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.