Thin film transistor substrate and method for manufacturing the same
US9929186B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2017 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Mar 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/441
Abstract
A thin film transistor substrate includes: a thin film transistor including: a first insulating film covering a gate electrode; a semiconductor channel layer selectively provided on the first insulating film; a second insulating film provided on the semiconductor channel layer; a first source electrode and a first drain electrode selectively provided on the second insulating film, a second source electrode and a second drain electrode provided on the first source electrode and the first drain electrode, respectively, a third insulating film that covers the second source electrode and the second drain electrode; a third source electrode connected to the semiconductor channel layer via a first contact hole provided through the third insulating film, the second and the first source electrode; a third drain electrode connected to the semiconductor channel layer via a second contact hole provided through the third insulating film, the second drain electrode, and the first drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.