Patent · US Active

Method of manufacturing an infrared detector having a micro-cavity and a low refraction index step at an interface with a transparent cap, and associated infrared detector

US9929196B2 · kind B2 · utility

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6References
28Claims
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Key dates

Filing dateJan 6, 2017
Grant dateMar 27, 2018
Priority date
Expiry dateJan 6, 2037

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01J2005/204
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method of manufacturing a detector capable of detecting a wavelength range [λ8; λ14] centered on a wavelength λ10, including: forming said device on a substrate by depositing a sacrificial layer totally embedding said device; forming, on the sacrificial layer, a cap including first, second, and third optical structures transparent in said range [Δ8; λ14], the second and third optical structures having equivalent refraction indexes at wavelength λ10 respectively greater than or equal to 3.4 and smaller than or equal to 2.3; forming a vent of access to the sacrificial layer through a portion of the cap, and then applying, through the vent, an etching to totally remove the sacrificial layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.