Light-emitting device and method for manufacturing the same
US9929207B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2016 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Mar 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8215
Abstract
A light-emitting device is provided. The light-emitting device comprises: a semiconductor structure comprising a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; and an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; wherein the second part functions as a low-resistance resistor and loses its make diode behavior, the active layer in the first part is capable of generating light, and the active layer in the second part is incapable of generating light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.