Spin-orbit torque magnetic random access memory
US9929210B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2017 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Feb 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A spin-orbit torque magnetic random access memory includes a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer including a ferromagnetic first metal layer, an anti-ferromagnetic second metal layer, and a third metal layer for generating spin-Hall effect. The first metal layer has a thickness ranging from 0.5 nm to 1.5 nm and exhibits perpendicular magnetic anisotropy (PMA). The second metal layer has a thickness greater than 6 nm for providing an exchange bias field. The second metal layer is an IrMn layer not undergone out-of-plane magnetic annealing or coating and exhibiting no PMA. The magnetic free layer has a coercive magnetic field (Hc) upon reaching the critical current density, and |HEB|>|Hc|.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.