Semiconductor device structure for improved performance and related method
US9929241B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 3, 2016 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Feb 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a vertical gate electrode in a gate trench in a semiconductor substrate, and a lateral gate electrode over the semiconductor substrate and adjacent the gate trench, where the lateral gate electrode results in improved electrical performance of the semiconductor device. The improved electrical performance includes an improved avalanche current tolerance in the semiconductor device. The improved electrical performance includes a reduced impact ionization under the gate trench. The improved electrical performance includes a reduced electric field under the gate trench. The lateral gate electrode results in an improved thermal stability in the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.