Nitride light emitting diode and fabrication method thereof
US9929308B2 · kind B2 · utility
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Key dates
| Filing date | Jul 13, 2017 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Jul 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride light-emitting diode (LED) fabrication method includes: providing a glass substrate; stacking a buffer layer structure composed of circular SiAlN layers and AlGaN layers with the number of cycles 1-5; growing a non-doped GaN layer, an N-type layer, a quantum well layer and a P-type layer. By using the low-cost glass the substrate that has a mature processing technology, and growing a SiAlN and an AlGaN buffer layer thereon, lattice mismatch constant between the substance and the epitaxial layer can be improved. Therefore, photoelectric property of the LED can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.