IR thermopile sensor with temperature reference formed in front-end process
US9929333B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2016 |
| Grant date | Mar 27, 2018 |
| Priority date | — |
| Expiry date | Jul 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/851
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An infrared thermopile sensor, an electronic device, and a method for fabricating an infrared thermopile sensor using a front-end process that employ example techniques in accordance with the present disclosure are described herein. In an implementation, the infrared thermopile sensor includes a silicon substrate that has been implanted during front-end processing to form an implant region; a passivation layer disposed on a first side of the silicon substrate, where the passivation layer forms a membrane; and an interlayer dielectric formed on the passivation layer, where the interlayer dielectric includes at least one thermopile that includes at least one thermocouple in series; and at least one metallic interconnect that electrically couples the at least one thermopile to a bond pad; and at least one bond pad interconnect that electrically couples the implant region to the bond pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.