Spin current devices and methods of fabrication thereof

US9929338B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Jing Shi · Beijing, CN
• Junxue Li · Riverside, US
• Yadong Xu · Beijing, CN
• Mohammed Aldosary · Riverside, US
• Chi-Keung Tang · Hong Kong, CN
• Roger Lake · Riverside, US

Key dates

• Filing date: Oct 10, 2016
• Grant date: Mar 27, 2018
• Expiry date: Oct 10, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N15/00

Abstract

Pure spin current devices are provided. The devices include sandwich structures of metal/magnetic insulator/metal. A first current injected in a first metal layer generates a pure spin current. The spin current can be switched between “on” and “off” states by controlling an in-plane magnetization orientation of the magnetic insulator. In the “on” state, the pure spin current is transmitted from the first metal layer to the second metal layer, through the magnetic insulator layer. The pure spin current in the second metal layer induces generation of a second charge current. In the “off” state, the pure spin current is absorbed at the interface between the first metal layer and the metal insulator. Such structures can serve as pure spin current valve devices or provide analog functionality, as rotating the in-plane magnetization provides analog sinusoidal modulation of the spin current.