Light-emitting device

US9929350B2 · kind B2 · utility

Assignee

• Semiconductor Energy Laboratory Co., Ltd. · JP

Inventors

• Shunpei Yamazaki · Setagaya, JP
• Satoshi Seo · Yokohama, JP
• Nobuharu Ohsawa · Yokohama, JP
• Satoko Shitagaki · Yokohama, JP
• Hideko Inoue · Yokohama, JP
• Hiroshi Kadoma · Yokohama, JP
• Harue Osaka · Atsugi, JP
• Kunihiko Suzuki · Yokohama, JP
• Yasuhiko Takemura · Yokohama, JP

Key dates

• Filing date: Feb 27, 2012
• Grant date: Mar 27, 2018
• Expiry date: Feb 27, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K2101/90

Abstract

A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.